X-Ray Residual Stress Measurement of Silicon Single Crystal

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  • シリコン単結晶のＸ線残留応力測定法
  • シリコンタンケッショウ ノ Xセン ザンリュウ オウリョク ソクテイホウ

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An X-ray stress measuring method for a silicon single crystal is proposed. Various stresses σa were applied to a silicon single crystal wafer specimen, and the strains of different diffraction planes were measured by X-rays. The variation of peak positions at various ψ angles caused by various applied stresses σa was investigated. The measured peak positions were plotted in the sin2ψ diagram for various applied stresses σa. Although the peak positions of different diffraction planes in the sin2ψ diagram deviated from a straight line determined by the least squares method, the straight lines crossed at a point, and the slope M and intercept N of the straight line varied linearly with the applied stress σa. This shows that the peak position and the strain for a fixed ψ angle vary proportionally to the applied stress σa. For plane stress state, the residual stress of a silicon single crystal specimen can be determined using the slope M and intercept N.

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