Analysis of Crack Propagation in Stealth Dicing Using Stress Intensity Factor(<Special Issue>M & M 2009 Conference)

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  • ステルスダイシングにおける応力拡大係数を用いたき裂進展解析(<小特集>M&M2009材料力学カンファレンス)
  • ステルスダイシングにおける応力拡大係数を用いたき裂進展解析
  • ステルスダイシング ニ オケル オウリョク カクダイ ケイスウ オ モチイタ キレツ シンテン カイセキ

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Abstract

In stealth dicing (SD), a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave is propagated every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside a wafer after the thermal shock wave propagation. In our previous study, it was supposed that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse over-laps with this layer partially. In this study, a two-dimensional thermal elasticity analysis based on the fracture mechanics was conducted. The internal crack propagation was analyzed by calculating the stress intensity factor at the crack tips and comparing with a threshold of that. As a result, validity of the previous hypothesis was suggested.

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