320x240 element uncooled infrared focal plane array using SOI wafer

DOI Web Site 1 Citations 7 References
  • Ueno Masashi
    Advanced Technology R&D Center, Mitsubishi Electric Corporation
  • Ishikawa Tomohiro
    Advanced Technology R&D Center, Mitsubishi Electric Corporation
  • Nakaki Yoshiyuki
    Advanced Technology R&D Center, Mitsubishi Electric Corporation
  • Endo Kazuyo
    Advanced Technology R&D Center, Mitsubishi Electric Corporation
  • Ohta Yasuaki
    Advanced Technology R&D Center, Mitsubishi Electric Corporation
  • Sone Takanori
    Advanced Technology R&D Center, Mitsubishi Electric Corporation
  • Kimata Masafumi
    Advanced Technology R&D Center, Mitsubishi Electric Corporation

Bibliographic Information

Other Title
  • SOI基板を用いた320×240画素非冷却赤外イメージセンサ
  • SOI キバン オ モチイタ 320 240 ガソ ヒレイキャク セキガイ イメージセンサ

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Description

A 320x240 element uncooled infrared FPA(Focal Plane Array)with series PN junction diodes fabricated on a SOI(Silicon On Insulator)wafer has been developed. The forward-biased diodes are used as a temperature detector by measuring the voltage drop across them. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI layer which has few defects. The pixel contains an infrared absorbing structure with a high fill factor of 90% to achieve high absorption. The FPA has shown the NETD(Noise Equivalent Temperature Difference)of 0.17K with f/1.0 optics. The whole structure can be fabricated in a conventional silicon LSI process line. This feature considerably reduces the cost of uncooled FPAs.

Journal

  • ITE Technical Report

    ITE Technical Report 24.17 (0), 53-58, 2000

    The Institute of Image Information and Television Engineers

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