Magnetoresistive effects in magnetic tunneling junctions with various insulating materials

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  • 磁気トンネリング素子の絶縁層材料と磁気抵抗効果
  • ジキ トンネリング ソシ ノ ゼツエンソウ ザイリョウ ト ジキ テイコウ コウカ

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Abstract

We investigated relationship between magnetoresistive effects and barrier heights in "Ni-20at%Fe(15 nm)/insulator(1.5-2.0 nm)/Co-17at%Pt(30 nm)/substrate" magnetic tunneling junctions (MTJ) with various insulating materials. The highest magnetoresistance ratio is obtained in the MTJ with Al-O layer. The magnetoresistance ratio in the MTJ with Mg-Al-O layer is 2-3%. The other MTJ show the magnetoresistance ratios less than 1%. The barrier heights of the MTJ with the Al-O and the Mg-Al-O layers are 2.05 eV and 1.04 eV, respectively. The barrier heights of the other MTJ are 0.55-0.71 eV. It is understood that the magnetoresistance ratio becomes high as the barrier height becomes high.

Journal

  • ITE Technical Report

    ITE Technical Report 23.37 (0), 15-18, 1999

    The Institute of Image Information and Television Engineers

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