書誌事項
- タイトル別名
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- Application of Active Pixel Sensor for Charged Particles to Mass Spectrometry
- 荷電粒子検出用二次元半導体素子の質量分析計への応用
- カデン リュウシ ケンシュツヨウ 2ジゲン ハンドウタイ ソシ ノ シツリョウ ブンセキケイ エ ノ オウヨウ
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Output characteristics of two-dimensional solid-state detector for charged particles has been analyzed by ion irradiation with keV level energy. The detector was designed by CMOS rule and constructed as stacked CMOS-device[1]. The detector was operated under nondestructive readout mode due to correction of fixed pattern noises among pixels and reset noise of a pixel. The output signals of a pixel correlated linearly with incoming ions over the range of four orders of magnitude. Non-linear effects of the output is about 10% over the whole dynamic range of a pixel. The dominant effects of the non-linear components are reset voltage drop down by overlap capacitance. After correction of the drop down effect the nonlinearity reduced to percent level, the percent level nonlinearity was due to voltage dependence of pixel capacitance with ion irradiation.
収録刊行物
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- 映像情報メディア学会技術報告
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映像情報メディア学会技術報告 24.3 (0), 13-18, 2000
一般社団法人 映像情報メディア学会
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詳細情報 詳細情報について
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- CRID
- 1390282679500480384
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- NII論文ID
- 110003687785
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- NII書誌ID
- AN00348041
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- ISSN
- 02853957
- 24241970
- 13426893
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- NDL書誌ID
- 4985698
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可