CMOS Image Sensor for Charge Particle Detection
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- Takayanagi Isao
- Olympus Optical Co., Ltd.
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- Nakamura Jun-ici
- Olympus Optical Co., Ltd.
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- Yurimoto Hisayoshi
- Tokyo Institute of Technology
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- Kunihiro Takuya
- Tokyo Institute of Technology
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- Nagashima Kazuhide
- Tokyo Institute of Technology
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- Kosaka Koji
- Tokyo Technology
Bibliographic Information
- Other Title
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- 荷電粒子検出用CMOSイメージセンサ
- カデン リュウシ ケンシュツヨウ CMOS イメージ センサ
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Description
A stacked CMOS active pixel image sensor has been developed for detecting charge particles. Wide dynamic range of 80 dB and good linearity have been demonstrated with a charge particle imaging system which incorporates a secondary ion mass spectrometer(SIMS). noise measurement results suggest that dynamic range exceeding 100 dB can be obtained if the reset noise is suppressed by utilizing the nondestructive readout (NDRO) capability of the CMOS APS.
Journal
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- ITE Technical Report
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ITE Technical Report 23.60 (0), 7-12, 1999
The Institute of Image Information and Television Engineers
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Details 詳細情報について
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- CRID
- 1390282679501777792
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- NII Article ID
- 110003687274
- 10022312615
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- NII Book ID
- AN1059086X
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- ISSN
- 24241970
- 13426893
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- NDL BIB ID
- 4916129
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- CiNii Articles
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- Abstract License Flag
- Disallowed