A 3.25M-pixel APS-C size CMOS Image Sensor
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- Inoue Shunsuke
- CANON INC.Device Development Center
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- Sakurai Katsuhito
- CANON INC.Device Development Center
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- Ueno Isamu
- CANON INC.Device Development Center
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- Koizumi Toru
- CANON INC.Device Development Center
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- Hiyama Hiroki
- CANON INC.Device Development Center
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- Asaba Tetsuo
- CANON INC.Device Development Center
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- Sugawa Shigetoshi
- Department of Electronic Engineering Graduate School of Engineering, Tohoku University
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- Maeda Atsushi
- MITSUBISHI Electric Corporation ULSI Development Center
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- Higashitani Keiichi
- MITSUBISHI Electric Corporation ULSI Development Center
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- Kato Hisayuki
- MITSUBISHI Electric Corporation ULSI Development Center
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- Iizuka Koji
- MITSUBISHI Electric Corporation System LSI Division
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- Yamawaki Masao
- MITSUBISHI Electric Corporation System LSI Division
Bibliographic Information
- Other Title
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- 325万画素APS-CサイズCMOSイメージセンサ
- 325マン ガソ APS Cサイズ CMOS イメージセンサ
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Abstract
A 3.25 M-pixel CMOS Image Sensor has been developed for a digital SRL camera system. A pixel is 10.5um sq. and consists of a buried-type photodiode and four transistors. A perfect charge transfer structure and column-to-column noise cancellation circuit enable reduction of pixel reset noise and fixed pattern noise. A 0.35um 1poly-3metal CMOS technology with additional photodiode fabrication process has been employed. The dark current density is 60pA/cm2(@60℃), random noise is 0.27 mVrms and the power consumption is 250mW.
Journal
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- ITE Technical Report
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ITE Technical Report 25.28 (0), 37-41, 2001
The Institute of Image Information and Television Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282679503185280
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- NII Article ID
- 10012333783
- 110003688901
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- NII Book ID
- AN1059086X
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- ISSN
- 24241970
- 13426893
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- NDL BIB ID
- 5725681
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed
