CMOSセンサにおけるトランスファゲート負バイアス印加時の暗電流解析

DOI Web Site 8 References
  • Yamashita Hirofumi
    Image Sensor and Camera Module Development Group, Semiconductor Company, Toshiba Corporation
  • Maeda Motohiro
    Image Sensor and Camera Module Development Group, Semiconductor Company, Toshiba Corporation
  • Furuya Shogo
    Image Sensor and Camera Module Development Group, Semiconductor Company, Toshiba Corporation
  • Yagami Takanori
    Image Sensor and Camera Module Development Group, Semiconductor Company, Toshiba Corporation

Bibliographic Information

Other Title
  • CMOSセンサにおけるトランスファゲート負バイアス印加時の暗電流解析(携帯電話用カメラ,デジタルスチルカメラ,ビデオカメラ(ハイビジョン)とそのためのイメージセンサ,モジュール)
  • CMOS センサ ニ オケル トランスファゲートフバイアス インカジ ノ アンデンリュウ カイセキ

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Description

Dark current mechanisms in a 4-Transistor CMOS imager pixel with a negative gate bias on a transfer gate have been investigated. The increase of dark current with the negative gate bias has been attributed to the Gate-Induced-Leak (GIL) Trap Assisted Tunneling (TAT) by examining dark current dependency both on negative gate bias and on temperature. The negative gate bias on a transfer gate efficiently reduces Shockley -Read-Hall (SRH) dark current but generates GIL-TAT dark current when large negative gate bias is applied.

Journal

  • ITE Technical Report

    ITE Technical Report 33.38 (0), 1-4, 2009

    The Institute of Image Information and Television Engineers

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