Feasibility Study on EMI Measurement "furoshiki" using 2V Organic CMOS and Silicon CMOS
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- ISHIDA Koichi
- University of Tokyo
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- MASUNAGA Naoki
- University of Tokyo
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- ZHOU Zhiwei
- University of Tokyo
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- YASUFUKU Tadashi
- University of Tokyo
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- SEKITANI Tsuyoshi
- University of Tokyo
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- ZSCHIESCHANG Ute
- Max Planck Institute for Solid State Research
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- KLAUK Hagen
- Max Planck Institute for Solid State Research
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- TAKAMIYA Makoto
- University of Tokyo
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- SOMEYA Takao
- University of Tokyo
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- SAKURAI Takayasu
- University of Tokyo
Bibliographic Information
- Other Title
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- 2V有機CMOSとシリコンCMOSを用いたEMI測定用風呂敷の原理検証(アナログ,アナデジ混載,RF及びセンサインタフェース回路)
- 2V有機CMOSとシリコンCMOSを用いたEMI測定用風呂敷の原理検証
- 2V ユウキ CMOS ト シリコン CMOS オ モチイタ EMI ソクテイヨウ フロシキ ノ ゲンリ ケンショウ
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Description
Electromagnetic interference (EMI) that degrades the dependability of electronic devices is becoming a serious issue. To realize a measurement of EMI distribution on the surface of electronic devices, a stretchable 12×12cm^2 EMI measurement sheet was developed. This paper reports a feasibility study on the EMI measurement "furoshiki" using both a 2V Organic CMOS technology and a 0.18μm silicon CMOS.
Journal
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- ITE Technical Report
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ITE Technical Report 33.39 (0), 1-6, 2009
The Institute of Image Information and Television Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282679504055680
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- NII Article ID
- 110007484181
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- NII Book ID
- AN1059086X
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- ISSN
- 24241970
- 13426893
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- NDL BIB ID
- 10445516
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed