Growth and emission property of ZnO film by hydrogen remote plasma CVD
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- SHIMIZU Yoshimi
- Research Institute of Electronics, Shizuoka University
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- NAKAMURA Atsushi
- Research Institute of Electronics, Shizuoka University
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- AOKI Toru
- Research Institute of Electronics, Shizuoka University
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- TEMMYOU Jiro
- Research Institute of Electronics, Shizuoka University
Bibliographic Information
- Other Title
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- 水素リモートプラズマCVD法によるZnOの成長と発光特性(発光型・非発光型ディスプレイ合同研究会)
- 水素リモートプラズマCVD法によるZnOの成長と発光特性
- スイソ リモートプラズマ CVDホウ ニ ヨル ZnO ノ セイチョウ ト ハッコウ トクセイ
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Abstract
c-plane ZnO films were grown on a-plane sapphire substrate by remote plasma enhanced chemical vapor deposition using a diethylzinc and oxygen gas with hydrogen plasma radicals, which was generated by rf-hollow cathode jet plasma, in order to decompose the diethylzinc at low temperature. ZnO (0001) films were grown on sapphire (11-20) substrates at substrate temperature 300℃. Deep emission of PL spectra was decreased by control of H_2 and O_2 gas flow ratio.
Journal
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- ITE Technical Report
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ITE Technical Report 27.4 (0), 61-64, 2003
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Keywords
Details 詳細情報について
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- CRID
- 1390282679504598912
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- NII Article ID
- 110003672180
- 10018990110
- 110003268314
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- NII Book ID
- AN1059086X
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- ISSN
- 09135685
- 24241970
- 13426893
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed