High-Density Recording in Mass-Productive Polycrystalline Ferroelectric Thin Film Media
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- Fujimoto Kenjiro
- Corporate R & D, Pioneer Corporation
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- KAWANO Takahiro
- Corporate R & D, Pioneer Corporation
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- ONOE Atsushi
- Corporate R & D, Pioneer Corporation
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- TAMURA Masahiro
- AMAYA Corporation
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- UMEDA Masaru
- Wacom R & D Corporation
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- TODA Masayuki
- Wacom R & D Corporation
Bibliographic Information
- Other Title
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- 量産性を考慮した強誘電体高密度記録用多結晶薄膜記録媒体(固体メモリおよび一般)
- 量産性を考慮した強誘電体高密度記録用多結晶薄膜記録媒体
- リョウサンセイ オ コウリョ シタ キョウ ユウデンタイ コウミツド キロクヨウ タケッショウ ハクマク キロク バイタイ
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Abstract
We demonstrate very-high-density ferroelectric recording experiments of 1Tbit/in^2 in polycrystalline Pb (Zr, Ti)O_3 (PZT) thin film for the first time. A high-quality polycrystalline PZT thin film was successfully deposited on a silicon substrate with a SrRuO_3 (SRO) electrode by metal-organic chemical vapor deposition (MOCVD) technique. The roughness of the PZT film was reduced to less than 1nm by chemical mechanical polishing (CMP) method. The PZT film has a very high controllability for domain inversion. Our fabrication process also enables high productivity. Therefore, our PZT film has potential to be a mass-productive ferroelectric recording medium for high-density storage systems.
Journal
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- ITE Technical Report
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ITE Technical Report 33.41 (0), 25-29, 2009
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Details 詳細情報について
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- CRID
- 1390282679504634624
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- NII Article ID
- 110007484215
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- NII Book ID
- AN1059086X
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- ISSN
- 24241970
- 13426893
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- NDL BIB ID
- 10445173
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed