Low Temperature Annealing Amorphous In-Ga-Zn-4 Thin-Film Transistor on Plastic Substrate

DOI Web Site 13 References
  • NEGISHI Tsuyoto
    Integrative Technology Research Institute, New Business Development Group, TEIJIN LIMITED
  • HANADA Toru
    Integrative Technology Research Institute, New Business Development Group, TEIJIN LIMITED
  • SOEDA Masaya
    Integrative Technology Research Institute, New Business Development Group, TEIJIN LIMITED
  • SHIRO Takashi
    Integrative Technology Research Institute, New Business Development Group, TEIJIN LIMITED

Bibliographic Information

Other Title
  • 高分子基板上でのa-IGZO TFTの形成(ディスプレイ用新材料)
  • 招待講演 高分子基板上でのa-IGZO TFTの形成
  • ショウタイ コウエン コウブンシ キバン ジョウ デ ノ a IGZO TFT ノ ケイセイ

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Description

For flexible display development, amorphous In-Ga-Zn oxide thin film transistors were fabricated on plastic substrate at ambient temperature. The transistor structure was coplanar top-gate. a-IGZO TFTs were fabricated on plastic substrate under ambient temperature. After annealing at 150℃ the field-effect mobility was 7.4 cm_2/Vs, threshold voltage 0.3V, subthreshold swing 0.29V/decade and on-off current ratio 10^8. Even after environmental testing at 60℃ and 90% RH for 250h, there were only slight change in the TFT characteristics. The hysteresis with forward and reverse gate voltage also had a small ΔV_<th>, 0.5V.

Journal

  • ITE Technical Report

    ITE Technical Report 35.11 (0), 9-13, 2011

    The Institute of Image Information and Television Engineers

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