Toward an increase of the rf output power from MgO-based tunnel magnetoresistance devices

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  • MgO障壁強磁性トンネル接合素子を用いたスピントルク発振の高出力化に向けて(映像情報機器および一般)
  • MgO障壁強磁性トンネル接合素子を用いたスピントルク発振の高出力化に向けて
  • MgO ショウヘキ キョウジセイ トンネル セツゴウ ソシ オ モチイタ スピントルク ハッシン ノ コウシュツリョクカ ニ ムケテ

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Abstract

A steady magnetization precession induced by spin-torque was studied in magnetic tunnel junctions with an Fe-rich CoFeB free layer under a perpendicular magnetic field. The Fe-rich CoFeB free layer exhibits a low critical current (I_c) for spin-torque induced switching. The low value of I_c for the Fe-rich CoFeB free layer enables us to observe the spin-torque induced rf oscillation even at a low dc bias current (I_<dc>). The oscillation frequency increased with increasing I_<dc>, indicating the out-of-plane precessional mode. Owing to the perpendicular magnetic anisotropy in the Fe-rich CoFeB free layer, the large relative angle between the free and pinned layers can be achieved under the perpendicular magnetic field. Due to this effect and out-of-plane precession of the magnetization, we could observe the large rf output power as high as 175nW.

Journal

  • ITE Technical Report

    ITE Technical Report 35.1 (0), 17-19, 2011

    The Institute of Image Information and Television Engineers

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