25.3μ W at 60fps 240×160 Pixel Vision Sensor for Motion Capturing with In-Pixel Non-volatility Analog Memory Using Crystalline Oxide Semiconductor FET : A Vision Sensor using Crystalline Oxide semiconductor

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  • 25.3μ W at 60fps 240×160 Pixel Vision Sensor for Motion Capturing with In-Pixel Non-volatility Analog Memory Using Crystalline Oxide Semiconductor FET : 結晶性酸化物半導体を用いたビジョンセンサ(固体撮像技術および一般)
  • 25.3μW at 60fps 240×160 Pixel Vision Sensor for Motion Capturing with In-Pixel Non-volatility Analog Memory Using Crystalline Oxide Semiconductor FET : 結晶性酸化物半導体を用いたビジョンセンサー
  • 25.3mW at 60fps 240 × 160 Pixel Vision Sensor for Motion Capturing with In-Pixel Non-volatility Analog Memory Using Crystalline Oxide Semiconductor FET : ケッショウセイ サンカブツ ハンドウタイ オ モチイタ ビジョンセンサー

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Abstract

We have fabricated a vision sensor with in-pixel non-volatility analog memory using a c-axis aligned crystalline oxide semiconductor FET that demonstrates very low off-state current. The pixel is possible to retain not only capturing image data but also differential image data of a given reference flame for a long time. Thus, the vision sensor can realize normal image capturing and extracting a differential image by an electronic global shutter, and motion capturing by judging the presence or absence of differences. Furthermore, it has three modes of operations, and can reduce power consumption by power gating idling blocks in each mode.

Journal

  • ITE Technical Report

    ITE Technical Report 39.16 (0), 13-16, 2015

    The Institute of Image Information and Television Engineers

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