Effect and Limitation of Pinned Photodiode(Process technologies,2nd Asian Image Sensors and Imaging Systems Symposium)

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  • Teranishi Nobukazu
    Research Institute of Electronics, Shizuoka University:Laboratory of Advanced Science and Technology for Industry

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  • Information Sensing Technologies ; 2nd Asian Image Sensors and Imaging Systems Symposium

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The pinned photodiode (PPD) is the primary technology for image sensors and used in almost all CCD image sensors and CMOS image sensors. This paper discusses effect and limitation of PPD, especially dark current and electronic shuttering. Even when PPD is used and silicon surface is neutralized, proposed model explains that GR centers at the silicon surface contribute the dark current. The temperature dependence is an activation type with activation energy, E_g, not E_g/2. It is important to reduce GR centers for dark current reduction at PPD also. It is also noted that the vertical overflow drain (VOD) shutter combined with PPD has potential of high speed shuttering with small skew.

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