書誌事項
- タイトル別名
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- Fabrication of 200.DEG.C.-operated SiC Switching Module
- 200ドC ドウサ SiC スイッチングモジュール ノ カイハツ
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抄録
In this paper, a SiC module in which the devices are operated beyond the junction temperature of 200°C was designed, manufactured and tested. The module was designed by considering the heat-resistance of each constituent material to realize a continuous heat distribution. We found that the ratio of voids in the die-bonding material can reduced by about 5% in volume by choosing the reflow conditions of the temperature profile and the environmental condition for Au–Sn and Sn–Ag–Cu lead-free solders. The 200°C operation of the designed module was confirmed by directly feeding a current into the SiC chip to elevate the temperature of the chip. In order to demonstrate real 200°C SiC device operation with the present module, we designed and assembled a DC–DC converter with a SiC-RESURF-JFET and SiC-SBD. The present module was successfully operated at a chip temperature of 200°C in the DC–DC converter.
収録刊行物
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- エレクトロニクス実装学会誌
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エレクトロニクス実装学会誌 13 (4), 280-287, 2010
一般社団法人エレクトロニクス実装学会
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詳細情報 詳細情報について
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- CRID
- 1390282679536343168
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- NII論文ID
- 10030703073
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- NII書誌ID
- AA11231565
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- COI
- 1:CAS:528:DC%2BC3cXpvVekt7Y%3D
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- ISSN
- 1884121X
- 13439677
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- NDL書誌ID
- 10763749
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可