Development and Commercialization of Solder Bump Fabrication Technology with Molten Solder Injection Method
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- Aoki Toyohiro
- IBM Research - Tokyo, IBM Japan, Ltd.
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- Toriyama Kazushige
- IBM Research - Tokyo, IBM Japan, Ltd.
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- Orii Yasumitsu
- IBM Research - Tokyo, IBM Japan, Ltd.
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- Mori Hiroyuki
- IBM Research - Tokyo, IBM Japan, Ltd.
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- Takaguchi Akira
- Senju System Technology Co., Ltd.
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- Nauchi Takashi
- Senju Metal Industry Co., Ltd.
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- Nakamura Hideki
- Senju Metal Industry Co., Ltd.
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- Takahashi Seiichirou
- Fine Electronic Materials Research Laboratories, JSR Corporation
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- Mukawa Jun
- Fine Electronic Materials Research Laboratories, JSR Corporation
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- Hasegawa Koichi
- Fine Electronic Materials Research Laboratories, JSR Corporation
Bibliographic Information
- Other Title
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- 溶融はんだを使用したはんだバンプ形成技術の研究開発と実用化
- ヨウユウハンダ オ シヨウ シタ ハンダバンプ ケイセイ ギジュツ ノ ケンキュウ カイハツ ト ジツヨウカ
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Description
Fine pitch interconnection using a flip-chip method is a key technology to achieve ultra-high density packaging on 2.1D/2.5D/3D integrated devices. As the solder bump size gets smaller for fine pitch applications, controlling the properties of solder joints becomes more important for chip package interaction (CPI) and electro-migration (EM) performance. The electro-plating method is widely used to fabricate fine pitch bumps; however solder compositions are limited to pure Sn or some binary solders such as Sn-Ag, Sn-Cu, etc. Hence, a bumping technology with fine pitch capability and solder alloy flexibility is needed. Injection Molded Solder (IMS) is an advanced solder bumping technology for use on wafer and laminate. IMS is a very simple technology, and solder bumps can be formed by the injection of molten solder into holes of resist material. Therefore, solder alloys can be flexibly selected, and there is a high capability of fine pitch applications. We fabricated a prototype tool to develop IMS bumping technology on wafers. In parallel, we developed the high thermal durability resist material because the resist material must be stable at high temperatures (around 250 degrees C) during the IMS process and be perfectly stripped after the IMS operation without any residue on the surface of wafers. We successfully demonstrated fine pitch solder bumping down to 40 μm pitch and 20 μm in diameter with Sn-3wt%Ag-0.5wt%Cu using the prototype tool and developed resist material. In this paper, we introduce the IMS technology and development activities toward the commercialization of this technology.
Journal
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- Journal of The Japan Institute of Electronics Packaging
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Journal of The Japan Institute of Electronics Packaging 18 (6), 443-448, 2015
The Japan Institute of Electronics Packaging
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Details 詳細情報について
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- CRID
- 1390282679537571584
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- NII Article ID
- 130005112477
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- NII Book ID
- AA11231565
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- ISSN
- 1884121X
- 13439677
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- NDL BIB ID
- 026734886
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed