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Phosphorus Distribution in Electroless NiP Deposits.
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- TASHIRO Katsuhiko
- Graduate School, Kanto Gakuin University
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- YAMAMOTO Seiji
- Graduate School, Kanto Gakuin University
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- ISHIKAWA Kaoru
- Graduate School, Kanto Gakuin University
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- NAKAZATO Junichi
- Faculty of Engineering, Kanto Gakuin University
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- HONMA Hideo
- Faculty of Engineering, Kanto Gakuin University
Bibliographic Information
- Other Title
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- 無電解NiPめっき膜中におけるリンの分布状態
- ムデンカイ NiPメッキ マク チュウ ニ オケル リン ノ ブンプ ジョウタイ
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Description
In general, the solderability and bondability of electroless nickel (EN) deposits are greatly affected by the phosphorus contents in the deposited nickel films. This paper describes the phosphorus distribution and content in the EN films at both the initial stages and following steady state of deposition conditions.It was found that phosphorus contents in the deposits at the initial stages indicate higher values than the following steady state deposition. The highest phosphorus content in the films was obtained from the citric acid bath among the tested complexing agents. Phosphorus rich layer was formed at the top of the surface of EN deposits. And the P rich layer around 20 to 40nm is produced at the initial stages of deposition and this layer is always staid at the top of the deposited surface along with the progress of deposition reaction.
Journal
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- Journal of The Japan Institute of Electronics Packaging
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Journal of The Japan Institute of Electronics Packaging 5 (4), 359-365, 2002
The Japan Institute of Electronics Packaging
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Keywords
Details 詳細情報について
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- CRID
- 1390282679537999232
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- NII Article ID
- 130004165969
- 110001238879
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- NII Book ID
- AA11231565
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- ISSN
- 1884121X
- 13439677
- http://id.crossref.org/issn/13439677
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- NDL BIB ID
- 6210100
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed