Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH₄/H₂ PE-CVD

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  • Nishida Satoshi
    Environmental and Energy System Division, Graduate School of Engineering, Gifu University Center of Innovative Photovoltaic Systems, Gifu University
  • Muta Hiroshi
    Environmental and Energy System Division, Graduate School of Engineering, Gifu University Center of Innovative Photovoltaic Systems, Gifu University
  • Kuribayashi Shizuma
    Environmental and Energy System Division, Graduate School of Engineering, Gifu University Center of Innovative Photovoltaic Systems, Gifu University

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  • Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH<sub>4</sub>/H<sub>2</sub> PE-CVD

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In this study, a high speed jet was used to deposit silicon by SiH4/H2 plasma-enhanced chemical vapor deposition (PE-CVD), demonstrating a higher deposition rate than conventional PE-CVD. The shape of the deposited silicon material was found to depend on the mass-flow rate of the SiH4/H2 mixture. The velocity profiles of the jet flow were subsequently analyzed by computational fluid dynamics (CFD), with the results indicating that the velocity of the jet significantly influences the mass of silicon deposited on a glass substrate due to variation in mass transfer near substrate surface.

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