Thermoelectric Properties of p-type La<sub>2-<i>x</i></sub>M<sub><i>x</i></sub>CuO<sub>4</sub> (M = Ca, Sr, Ba) Thin Films Prepared by Pulsed Laser Deposition Method

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  • パルスレーザ蒸着法で作製したp型La<sub>2-<i>x</i></sub>M<sub><i>x</i></sub>CuO<sub>4</sub> (M = Ca, Sr, Ba)酸化物薄膜の熱電特性
  • パルスレーザ蒸着法で作製したp型La2-xMxCuO4(M=Ca,Sr,Ba)酸化物薄膜の熱電特性
  • パルスレーザ ジョウチャクホウ デ サクセイ シタ pガタ La2 xMxCuO4 M Ca Sr Ba サンカブツ ハクマク ノ ネツデントクセイ

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La2-xMxCuO4 (LMCO:M=Ba, Sr, Ca) thin films were deposited on SrTiO3 (100) substrates by pulsed laser deposition method. From the X-ray diffraction (XRD) patterns, the SCCO (Sm2-xCexCuO4) thin films on the SrTiO3(STO) substrate were confirmed that c-axis was parallel to the substrate normal and in-plane alignment was cube-on-cube for the substrate. The Seebeck coefficient and the resistivity decreased with the increasing an amount of M-element substitution. We calculated the power factor from these values and found that the highest value of 1.2 mW/mK2 at 330 K was achieved by the La2-xSrxCO thin film with x = 0.02. This value was almost equal to the reported value in Bi2Te3 film at room temperature. High power factor values in low temperature demonstrate the potential of RE2CuO4 system for the thermoelectric device.

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