A Method for Determining MIS Interface States by Therma- lly Stimulated Surface Potential
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- Yamashita Ken
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Technology
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- Iwamoto Mitsumasa
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Technology
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- Hino Taro
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Technology
Bibliographic Information
- Other Title
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- 熱刺激表面電位によるMIS界面準位の測定法
- ネツ シゲキ ヒョウメン デンイ ニヨル MIS カイメン ジュンイ ノ ソク
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Description
記事分類: 電気工学--電子工学--電子部品--固体素子
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 98 (2), 93-100, 1978
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390282679571037824
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- NII Article ID
- 40002516202
- 130003570332
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- NII Book ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL BIB ID
- 1929094
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles