Based on Free Electron Scheme under High-Frequency Current

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  • 2接触線の高周波通電に於ける近接抵抗に関する自由電子論的考察
  • 2セッショクセン ノ コウシュウハ ツウデン ニ オケル キンセツ テイコウ

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Abstract

Proximity resistance to high-frequency current conducted with same direction in contact has been analyzed, taking Lorentz and Coulomb forces into considerations.<br>As a result, displacement of conducting carriers caused by the proximity effect, forms the new current distribution with three components, that is, skin effect, Lorentz force and Coulomb force components without the boundaries of carriers.<br>Based on this consideration, the ratio of ac resistance to the dc one has been calculated, using Cassinian ovals. The calculated resistance was in agreement with experimental value within 10%.

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