発光減衰曲線の解析によるSiO<sub>2</sub>の微視的構造の乱雑さの評価

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タイトル別名
  • Evaluation of Microscopic Structural Randomness in SiO<sub>2</sub> through Analysis of Decay Profile of Photoluminescence
  • 発光減衰曲線の解析によるSiO2の微視的構造の乱雑さの評価
  • ハッコウ ゲンスイ キョクセン ノ カイセキ ニヨル SiO2 ノ ビシテキ

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Microscopic structural randomness in SiO2, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to the oxygen vacancy (≡Si-Si≡). As the samples with different degrees of randomness, an ionimplanted thermal SiO2 film, SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared with the method of separation by ion-implanted oxygen (SIMOX), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched-exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the sample whose structural randomness is presumed to be larger from the measurements of infrared absorption and the chemical etch rate in HF solution.

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