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- 平井 誠
- 長岡技科大
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- 鈴木 常生
- 長岡技科大
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- 江 偉華
- 長岡技科大
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- Grigoriu Constantin
- 長岡技科大
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- 八井 浄
- 長岡技科大
書誌事項
- タイトル別名
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- Characteristics of AlN Thin Films prepared by Pulsed Laser Ablation
- パルスレーザーアブレーションホウ デ サクセイ シタ AlN ハクマク ノ トクセイ
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抄録
Crystallized AlN thin films have been successfully prepared by pulsed laser deposition. In particular, the roughness on the film surface has been studied. The roughness has been found mainly due to the droplets and precipitates. It is found that droplets remain in the film and that precipitates grow from the film. With increasing substrate temperature, precipitates do not appear and the film surface becomes smoother. However, many precipitate nucleuses remain in the film. Relative dielectric constant of the film is typically 9.4 at 1 MHz.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 120 (2), 110-115, 2000
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679576693760
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- NII論文ID
- 10005319893
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 4973879
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- データソース種別
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- JaLC
- NDL
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