PTAT Voltage Generator under Ultra Low Power Supply with Two Subthreshold MOSFETs between Rails

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  • 弱反転動作のＭＯＳＦＥＴによる２段積み構成の微小電源電圧駆動ＰＴＡＴ電圧発生回路
  • ジャク ハンテン ドウサ ノ MOSFET ニ ヨル 2 ダンズミ コウセイ ノ ビショウ デンゲン デンアツ クドウ PTAT デンアツ ハッセイ カイロ

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A proportional to absolute temperature voltage (PTAT Voltage) generator under ultra low power supply with MOSFETs operating in weak inversion region is proposed. The PTAT voltage generator is a necessary circuit for temperature sensor and bandgap reference circuit under low power supply in minimized CMOS analog integrated circuit. When two MOSFETs operating in weak inversion region are connected between rails, the PTAT voltage generator can be driven even under ultra low power supply voltage. As gate terminals are common in two MOSFETs connected in series and also bulk terminals are common, a gate to bulk voltage for MOS diode in a MOSFET is equal to that in another MOSFET. The proposed PTAT voltage generator operating under supply voltage from 0.2V to 1.8V with -70dB PSRR is fabricated with a standard 0.18μ m n-well CMOS technology and measured to investigate the basic principle. The measured characteristics of output voltage versus temperature fit to the theoretical ones deriving from design principle exactly.

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