書誌事項
- タイトル別名
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- High-Efficiency UV LEDs using Quaternary InAlGaN
- チッカブツ 4ゲンコンショウ オ モチイタ コウコウリツ シガイ LED
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High-efficiency ultraviolet (UV) light sources are very attractive for application to white lighting, high-density memories, medical fields, etc. We have demonstrated that 300-370 nm UV emission is considerably enhanced by the introduction of several percent of In into AlGaN due to an In-segregation effect. We fabricated 310 nm band UV LEDs with quaternary InAlGaN emitting layers on sapphire substrate and obtained sub-milliwatt output power. We also fabricated 350 nm band InAlGaN-based quantum-well (QW) LEDs on GaN substrates in order to eliminate the effects of threading dislocations. The maximum UV output power obtained was as high as 7.4 mW under room temperature (RT) CW operation. The maximum external quantum efficiency (EQE) was 1.1% with an injection current of 50 mA, which is the highest EQE ever obtained for 350 nm band UV LEDs with top-emission geometry.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 125 (2), 225-232, 2005
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679580651776
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- NII論文ID
- 10014301981
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 7236336
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- KAKEN
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- 抄録ライセンスフラグ
- 使用不可