Transparent Conducting ZnO Thin Films Prepared at Room Temperature by PLD Method

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  • Agura Hideaki
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Takase Yasunori
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Uehara Kenji
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Nakamura Atsuhiro
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Higashimura Yoshinori
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Aoki Takanori
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Suzuki Akio
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Matsushita Tatsuhiko
    Department of Electronics, Information and Communication Engineering, Osaka Sangyo University
  • Okuda Masahiro
    Okuda Technical Office
  • Okinaka Hirokazu
    Hitachi High-Technologies Corporation

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  • パルスレーザ堆積法により低温基板に作製した酸化亜鉛系透明導電膜
  • パルスレーザ タイセキホウ ニ ヨリ テイオン キバン ニ サクセイ シタ サンカ アエンケイ トウメイ ドウデン マク

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Al-doped zinc oxide (AZO) or Ga-doped zinc oxide (GZO) films with c-axis orientation have been deposited on glass substrates by pulsed laser deposition (PLD) using an ArF excimer laser (λ= 193 nm) or Nd:YAG laser (λ= 532, 355, 266 nm). The film deposition took place at substrate temperatures of room temperature (25 °C) ∼ 200 °C. For the GZO film deposited by irradiating a pulsed laser beam of energy density of 1 J/cm2 at repetition frequency of 10 Hz, we obtained the 416 nm-thick GZO film with the lowest resistivity of 2. 89×10-4 Ω·cm for the case at a substrate temperature of room temperature. An average transmittance of more than 80 % in the visible region was obtained for the GZO films fabricated, providing useful functionality as TCO films in the visible region. Moreover, we studied whether the film properties were subject to influences of the position of the plume (in the central axis or at the periphery) generated between the substrate and the target.

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