Super High Power Blue-violet Semiconductor Laser Array

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  • Goto Shu
    Shiroishi Laser Center Semiconductor Laser Division Device Solutions Company Sony Corporation Micro Systems Network Company
  • Ikeda Masao
    Shiroishi Laser Center Semiconductor Laser Division Device Solutions Company Sony Corporation Micro Systems Network Company

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Other Title
  • 超高出力青紫色半導体レーザアレイ
  • チョウコウシュツリョク セイシショク ハンドウタイ レーザアレイ

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Abstract

This paper describes the development of super-high-power (SHP) AlGaInN-based blue-violet laser diode (LD) arrays. In 2001, the LD arrays were successfully fabricated using epitaxially laterally overgrown GaN substrates. The LD array consisted of 11 laser chips, each with 4 stripe emitters monolithically integrated. A maximum light output power of 4.2 W under continuous-wave (cw) operation at 25°C was achieved for the first time, demonstrating the highly uniform quality of the fabricated laser chips. In 2003, we reported a new SHP blue-violet LD composed of a single broad-area stripe emitter on a GaN substrate. A maximum light output power of 0.94 W under cw operation at 20 °C was achieved for the sample with the stripe width of 10 μm. An array of 11 of these LDs was also successfully fabricated, producing a combined light output power of over 6.1 W under cw operation at 20 °C.

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