Development of High-Frequency SiC-MESFETs
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- Arai Manabu
- Microwave Div., New Japan Radio Co., Ltd.
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- Honda Hirotake
- Microwave Div., New Japan Radio Co., Ltd.
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- Ono Shuichi
- Microwave Div., New Japan Radio Co., Ltd.
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- Sawazaki Hiroshi
- Microwave Div., New Japan Radio Co., Ltd.
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- Ogata Makoto
- Microwave Div., New Japan Radio Co., Ltd.
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- Akita kazumichi
- Microwave Div., New Japan Radio Co., Ltd.
Bibliographic Information
- Other Title
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- ＳｉＣ高周波ＭＥＳＦＥＴの開発
- SiC コウシュウハ MESFET ノ カイハツ
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Abstract
We have developed high power SiC-MESFETs for high-freqeuncy applications. We obtained a cut-off freqeuncy of 9.3 GHz and a maximum oscillation frequency of 34.2 GHz from a 0.5μm gate MESFET. We measured pulsed output power characteristics of 54.1 W at 1.0 GHz and 11.2 W at 9.4 GHz from a 39.2mm-gate-MESFET and a 9.6mm-gate-width MESFET, respectivly.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 124 (2), 369-374, 2004
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679582446336
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- NII Article ID
- 10011965633
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 6841408
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed