書誌事項
- タイトル別名
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- Development of 230-270 nm AlGaN-Based Deep UV LEDs
- 230 270nm シンシガイ AlGaNケイ LED ノ シンテン
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We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227.5-273 nm fabricated on high-quality AlN buffers on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). We realized crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by using ammonia (NH3) pulse-flow multi-layer (ML) growth technique. We obtained single-peaked operation of the AlGaN-MQW LED with wavelength of 227.5 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and external quantum efficiency (EQE) of the 261 and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) continuous-wave (CW) operation, and 0.15mW and 0.2% under RT pulsed operation, respectively.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 128 (5), 748-756, 2008
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679582697728
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- NII論文ID
- 10021132357
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 9495489
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可
