Fabrication of Micro-Gap Electrodes for Molecular Electronics
-
- Edura Tomohiko
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Mizuno Jun
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Tsutsui Ken
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Saito Mikiko
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Tokuda Masahide
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Onozato Harumasa
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Koizumi Toshiko
- Nanotechnology Research Laboratory, Waseda Univ.
-
- Wada Yasuo
- Nanotechnology Research Laboratory, Waseda Univ. CREST/JST
-
- Haemori Masamitsu
- Tokyo Inst. of Tech. Material and Structures Laboratory
-
- Koinuma Hideomi
- Tokyo Inst. of Tech. Material and Structures Laboratory CREST/JST
Bibliographic Information
- Other Title
-
- 分子エレクトロニクス用マイクロギャップ平坦電極の作製
- ブンシ エレクトロニクスヨウ マイクロギャップ ヘイタン デンキョク ノ サクセイ
Search this article
Abstract
Recently, organic molecular electrical devices such as molecular thin film transistors have received considerable attentions as possible candidates for next generation electrical and optical devices. This paper reports fabricating technologies of flat metallic electrodes on insulating substrates with micro-gap separation. The key technologies of fabricating the planar type electrodes are liftoff method by the combination of bi-layer photoresist with overhang profile and electron beam evaporation of thin metal (Ti and Au) films and SiO2-CMP (Chemical Mechanical Polishing) method of CVD (Chemical Vapor Deposition) deposited TEOS (Tetraethoxysilane) - SiO2 layer. The raggedness of the electrode/insulator interface and the electrode surface on the micro-gap electrodes were less than 3 nm. The isolation characteristics of fabricated electrodes were in the order of 1013 ohm at room temperature, which is enough for analyzing electronic properties of organic thin film devices. Finally, pentacene FET characteristics are discussed fabricated on the micro-gap flat electrodes. The mobility of this FET was 0.015cm2/Vs, which was almost on the order of the previous results. These results suggest that high performance organic thin film transistors would be realized on these advanced electrode structures.
Journal
-
- IEEJ Transactions on Electronics, Information and Systems
-
IEEJ Transactions on Electronics, Information and Systems 124 (6), 1213-1218, 2004
The Institute of Electrical Engineers of Japan
- Tweet
Details 詳細情報について
-
- CRID
- 1390282679582758912
-
- NII Article ID
- 10013069647
-
- NII Book ID
- AN10065950
-
- ISSN
- 13488155
- 03854221
-
- NDL BIB ID
- 6971260
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
-
- Abstract License Flag
- Disallowed