書誌事項
- タイトル別名
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- Fabrication and Electrical Properties of High-Power SiC Zener Diodes
- ダイ ヨウリョウ SiC ツェナーダイオード ノ サクセイ ト デンキ トクセイ ヒョウカ
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This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm×4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7×10-5 1/K (positive) in the temperature range 20-300°C. The Zener voltage of the fabricated Zener diodes decreased from 41 to 17 V with an increase in the doping concentration. In addition, power capabilities during rectangular pulsed power (tw = 1 ms) are 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at 300°C. The repeatable current test for 1 hour with triangular pulse, which corresponds to the surge current under the inverter operation, has been achieved without device failure.
収録刊行物
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- 電気学会論文誌C(電子・情報・システム部門誌)
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電気学会論文誌C(電子・情報・システム部門誌) 130 (8), 1343-1349, 2010
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679585490304
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- NII論文ID
- 10026497606
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 10766420
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可