書誌事項
- タイトル別名
-
- Particle-Limited Yield Prediction Method
- イブツ キイン ブドマリ ノ ヨソク シュホウ
この論文をさがす
抄録
Control charts are widely applied to monitoring quality variation from stable status to instable status in many manufacturing lines. Large-scale integrated circuit(LSI) manufacturing requires to monitor thin film thicknesses, circuit pattern dimensions, particle count on a wafer and so on. This paper proposes a new monitoring method for particles on a wafer. If particles induce random location based on Poison distribution, the c-chart is applicable. However, actual particle generation is not dependent of Poison distribution and then the c-chart indicates many false alarms. The proposed method predicts particle-limited yield to apply the p-chart to monitoring particle data. The method uses data outputted by a particle inspection tool such as a particle location and a scattered light intensity with respect to each particle. Experiments show that the method reduces false alarms.
収録刊行物
-
- 電気学会論文誌C(電子・情報・システム部門誌)
-
電気学会論文誌C(電子・情報・システム部門誌) 130 (8), 1404-1410, 2010
一般社団法人 電気学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679585519488
-
- NII論文ID
- 10026497754
-
- NII書誌ID
- AN10065950
-
- ISSN
- 13488155
- 03854221
-
- NDL書誌ID
- 10766604
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可