Fabrication and characterizations of AlCaN/GaN HEMTs with a buried p-layer
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- Shiojima Kenji
- NTT
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- Suemitsu Tetsuya
- NTT
Bibliographic Information
- Other Title
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- 埋め込みp層を有したAlGaN/GaN HEMTの作製と評価
- ウメ コミ pソウ オ ユウシタ AlGaN GaN HEMT ノ サクセイ ト ヒョウカ
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Abstract
We have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 2-μ-gate device showed good pinch-off characteristics, gm of 55mS/mm, and breakdown voltage of 70_??_90V. It was confirmed that the p-n junction successfully suppressed leakage current under the channel, and the ohmic metallization did not penetrate to the buried p-layer. Carrier confinement by the p-n junction was confirmed by both one-dimensional calculations by solving the Poisson equations and capacitance-voltage measurements. As for RF performances, the maximum fr of 5.5GHz and a carrier velocity of 1×107cm/s were obtained. These results indicate the potential of p-layer insertion into GaN-based FETs for reducing a short-channel effect and possibility of impact ionization. We can conclude that p-layers can be applied to GaN FETs in the same manner that they are to III-V semiconductor electron devices.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 122 (7), 1085-1088, 2002
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679586509568
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- NII Article ID
- 130006845119
- 10008844188
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 6204482
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- Data Source
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- JaLC
- NDL
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- CiNii Articles
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- Abstract License Flag
- Disallowed