Investigation of MQW Modulators Operating at A Parallel-Electric- Field

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  • 横方向電界を用いたMQW光変調器の検討
  • ヨコホウコウ デンカイ オ モチイタ MQW ヒカリ ヘンチョウキ ノ ケントウ

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Abstract

A new electroabsorption modulator operating at a parallel electric-field to the quantum wells is proposed and its modulation characteristics have been calculated. Transverse p-i-n structure on semi-insulating substrate enables us to apply a parallel field for MQW layers and results in low device capacitance and high-speed operation. The exciton resonance can easily broaden and disappear at field-intensity of 104 V/cm, one tenth of the perpendicular field previously used. A 3-dB bandwidth and operation voltage required for 20 dB extinction ratio are estimated to be over 250 GHz and less than 1 V, respectively, with transmission loss of less than 3 dB. High allowability of high incidental optical power and negative chirp operation are also discussed for this structure.

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