水素終端ダイヤモンド表面伝導層を利用した高性能電界効果トランジスタ

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  • High Performance Diamond Field-Effect Transistors on Hydrogen-Terminated Surface-Channel
  • スイソ シュウ タン ダイヤモンド ヒョウメン デンドウソウ オ リヨウ シタ コウセイノウ デンカイ コウカ トランジスタ

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Utilizing hydrogen-terminated surface-conductive layer as channel, high performance diamond FETs are demonstrated. High frequency operations of diamond transistors have been realized. 2μm gate diamond MESFET shows fT of 2.2GHz and fmax of 7GHz. Due to the effect of gate insulator insertion in series to source-gate capacitance of surface-channel, the source-gate capacitance of diamond MISFET is reduced by a factor of 2 as that of MESFET. The fT and fmax of 0.7μm gate diamond MISFET reach 11 and 18GHz respectively. Analysis of diamond short channel effect is also carried out. Down to 70nm channel diamond MISFETs are realized by utilizing new FET fabrication process for gate minimization. The short channel FETs with thick gate insulator more than 25nm shows short channel effect such as drain current increase by drain biasing, positive shift of VTH and degradation of subthreshold slope S. By the reduction of the thickness of gate insulator less than 20nm, VTH shift and degradation of Sare suppressed.

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