書誌事項
- タイトル別名
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- The Preparation of MgB<sub>2</sub> Films on ZnO Buffer Layers
- ZnOバッファー層上へのMgB2薄膜の作製
- ZnO バッファーソウ ジョウ エ ノ MgB2 ハクマク ノ サクセイ
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抄録
In this study, we tried to deposit ZnO films on Al2O3 (0001) and (112(-)0) substrates as buffer layers. ZnO and as-grown MgB2 films were deposited using molecular beam epitaxy (MBE). The crystallinity and superconductivity of the MgB2/ZnO film were studied using in-situ RHEED, XRD, resistance and a SQUID magnetometer. The ZnO layer was grown epitaxially on both of the substrates. From XRD θ-2θ scans, MgB2 films were observed only at MgB2-0001 and -0002 peaks and the Tc of these films was about 35 K. We discuss the effect of ZnO buffer layers for fabricating high-quality as-grown MgB2 films.
収録刊行物
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- 低温工学
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低温工学 41 (11), 474-480, 2006
公益社団法人 低温工学・超電導学会 (旧 社団法人 低温工学協会)
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詳細情報 詳細情報について
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- CRID
- 1390282679591003776
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- NII論文ID
- 130004871062
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- NII書誌ID
- AN00333419
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- COI
- 1:CAS:528:DC%2BD2sXitFyqug%3D%3D
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- ISSN
- 18800408
- 03892441
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- NDL書誌ID
- 8596556
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可