書誌事項
- タイトル別名
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- Atomic Model and Optimization of EUV Light Source
- キョクタン シガイ コウゲン ノ ゲンシ モデル ト サイテキ セッケイ
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説明
Extreme ultraviolet (EUV) radiation from laser produced plasmas (LPP) has been theoretically studied as a light source for lithography in mass-production of the next generation semiconductor devices. One of the critical issues for realization of a LPP-EUV light source is the conversion efficiency (CE) from incident laser power to EUV radiation of 13.5nm wavelength (within 2% bandwidth). From an atomic physical point of view, we explain the reason why tin has been chosen as the most suitable radiation material compared with xenon and lithium. We also present a power balance model, which can be used for the optimization of laser and target conditions to obtain high CE. We propose a double-pulse irradiation scheme for high CE using a carbon dioxides laser and a droplet target. Using our benchmarked numerical simulation code, we show a possibility to obtain CE up to 5-7%, much higher presently achieved.
収録刊行物
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- レーザー研究
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レーザー研究 36 (11), 690-699, 2008
一般社団法人 レーザー学会
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詳細情報 詳細情報について
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- CRID
- 1390282679623089024
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- NII論文ID
- 10024447909
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- NII書誌ID
- AN00255326
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- COI
- 1:CAS:528:DC%2BD1MXltFKiug%3D%3D
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- ISSN
- 13496603
- 03870200
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- NDL書誌ID
- 9720540
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
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- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可