書誌事項
- タイトル別名
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- Laser Annealing Process for ULSI Technology
- チョウLSI タイオウ レーザー フジュンブツ カッセイカ ギジュツ
- 公開日
- 2005
- DOI
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- 10.2184/lsj.33.457
- 公開者
- 一般社団法人 レーザー学会
この論文をさがす
説明
Using KrF excimer laser annealing with various laser pulse durations, we were able to form an ultra-shallow junction. Evaluating junction depth, sheet resistance, and crystal defects, we observed that in the case of long pulse durations, the number of crystal defects decreased. The combination of the junction depth and sheet resistance of the junction satisfied the request for a 90-nm node for ULSI. Furthermore, a MOSFET was fabricated by laser annealing with a heat assist. The heat assist is effective for reducing the required laser energy, crystal defects in the junction, and reducing laser damage to the electrode. We employed a simple onedimensional thermal diffusion model to estimate the solidification velocity during laser irradiation, with results indicating that longer pulse duration slowed the solidification velocity. Therefore, the behavior of the solidification velocity can explain the reduction of crystal defects.
収録刊行物
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- レーザー研究
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レーザー研究 33 (7), 457-461, 2005
一般社団法人 レーザー学会
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詳細情報 詳細情報について
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- CRID
- 1390282679624676224
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- NII論文ID
- 10016561278
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- NII書誌ID
- AN00255326
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- COI
- 1:CAS:528:DC%2BD2MXps1CgsbY%3D
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- ISSN
- 13496603
- 03870200
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- NDL書誌ID
- 7424375
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
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- CiNii Articles
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
