書誌事項
- タイトル別名
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- On-Chip New Current Sensing Method with High Accuracy Using Field Effect Resistance for Intelligent Power MOSFETs.
- パワー MOSFET ニ オンチップカデキル デンカイ コウカ テイコウ オ
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抄録
Current sensing function is indispensable to modern intelligent power semiconductor devices to detect whether or not a load is driven at a predetermined power level and/or an overcurrent at the time of overload, in order to protect the load and the power device.<br>In this paper, a new current sensing device technology is presented firstly, in which the operation principle is based on detecting voltage drop through a field effect resistance (FER) consisting of mainly channel resistance in DMOSFET. Our new current sensing device consists of DMOS, FER & voltage sensing cell, and lateral MOSFET operated as a temperature compensation resistor in a same chip. The FER-cell has the same structure as DMOS cell, and lateral MOSFET is electrically isolated from substrate by p-n junction. The accuracy of current sensing is within ±2% in a temperature range from -40 to 150°C.<br>The new current sensing device technology which can be integrated easily into power MOSFETs realizes intelligent power MOSFETs with high accurate current sensing and control in a wide temperature range.
収録刊行物
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- 電気学会論文誌D(産業応用部門誌)
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電気学会論文誌D(産業応用部門誌) 112 (9), 799-806, 1992
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679633863808
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- NII論文ID
- 130000959918
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- NII書誌ID
- AN10012320
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- ISSN
- 13488163
- 09136339
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- NDL書誌ID
- 3782677
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可