Bi-Directional Isolated DC-DC Converter for Next-Generation Power Distribution-Comparison of Converters Using Si and SiC Devices

Biela Juergen, Aggeler Daniel, Inoue Shigenori, Akagi Hirofumi, Kolar Johann W.

doi:10.1109/pccon.2007.373015

Bi-Directional Isolated DC-DC Converter for Next-Generation Power Distribution-Comparison of Converters Using Si and SiC Devices

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Biela Juergen

ETH Zurich, Power Electronic Systems Laboratory
Aggeler Daniel

ETH Zurich, Power Electronic Systems Laboratory
Inoue Shigenori

Tokyo Institute of Technology, Department of Electrical and Electronic Engineering
Akagi Hirofumi

Tokyo Institute of Technology, Department of Electrical and Electronic Engineering
Kolar Johann W.

ETH Zurich, Power Electronic Systems Laboratory

書誌事項

公開日: 2008

DOI

10.1541/ieejias.128.901
10.1109/pccon.2007.373015

公開者: 一般社団法人電気学会

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説明

In this paper two bi-directional DC-DC converters for a 1MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density. One DC-DC converter applies commercially available Si-devices and the other one high voltage SiC switch, which consists of a SiC JFET cascode (MOSFET+1 JFET) in series with five SiC JFETs.<br>In the comparison also the high frequency, high voltage transformer, which ensures galvanic isolation and which is a core element of the DC-DC converter, is examined in detail by analytic calculations and FEM simulations.<br>For validating the analytical considerations a 20kW SiC DC-DC converter has been designed in detail. Measurement results for the switching and conduction losses have been acquired from the SiC and also for a Si system for calculating the losses of the scaled 1MW system.