Purification of the Process Environment in Atmospheric Pressure Plasma CVD System.

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  • 大気圧プラズマＣＶＤシステムにおけるプロセス雰囲気の清浄化
  • タイキアツ プラズマ CVD システム ニ オケル プロセス フンイキ ノ セイジョウカ

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Abstract

In the atmospheric pressure plasma CVD system, improvement of the process environment by utilizing the reactivity between SiH4 and H20 was examined. The cleaning gas containing He and SiH4 was circulated by the gas circulation system in heated condition, and H2O which remained in the process atmosphere was measured by APIMS (Atmospheric Pressure Ionization Mass Spectrometer). Hydrogenated amorphous silicon (a-Si:H) films were deposited by the atmospheric pressure plasma CVD before and after the SiH4 circulation cleaning. In order to evaluate the effectiveness of the SiH4 circulation cleaning, contaminations such as O, N and C were analyzed by SIMS (Secondary Ion Mass Spectroscopy). Furthermore, the photoconductivity and the dark conductivity were compared. The results showed that the H20 concentration in the process atmosphere drastically decreased by the SiH4 circulation, and the O content in the a-Si:H film decreased similarly. The O content in the film after the SiH4 circulation cleaning was 5×1018 /cm3, which value was as same as or less than that by the conventional plasma CVD technique. The dark conductivity decreased, and the electrical property was improved. It was because the O content in the film decreased by the SiH4 circulation cleaning.

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