Luminance Characteristics of EL Devices using Electron Emitting Layers and Current Limitting Layers.

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  • 電子供給層と電流制限層を設けたＥＬ素子の発光特性
  • デンシ キョウキュウソウ ト デンリュウ セイゲンソウ オ モウケタ EL ソ

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A large number of electrons can be fixed in S1O2, Al2O3 and Ta2O5 low-resistive insulating films (ρ=107-108 Ωcm at1-5 × 105 V/cm) deposited by the electron beam heating method because these films have oxygen starved states. When an electric field of about 7 × 105 V/cm is applied to the films, the electric field is clamped, and a considerably large current flows, similar to an avalanche phenomenon. By placing these insulating films on both sides of the phosphor film for electron emitting layers, the gradient of the luminance vs voltage curve becomes steep (2300 cd/m2 at 30 V above from threshold voltage). <BR>High luminescence (3700 cd/m2 at 1 kHz sine wave voltage) can be obtained by depositing high-resistive insulating SiO2 films of 1012-4014 Ωcm (at 1 × 106 V/cm), as current limiting layers, outside the electron emitting layers. This device worked up to 110 V from the threshold voltage.

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