Growth of MnAs on S- and Se-passivated GaAs substrates
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- Uragami T.
- School of Engineering. The University of Tokyo
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- Ono K.
- School of Engineering. The University of Tokyo
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- Mizuguchi M.
- School of Engineering. The University of Tokyo
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- Mano T.
- School of Engineering. The University of Tokyo
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- Fujioka H.
- School of Engineering. The University of Tokyo
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- Oshima M.
- School of Engineering. The University of Tokyo
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- Tanaka M.
- School of Engineering. The University of Tokyo
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- Watanabe Y.
- NTT Laboratories
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Abstract
We have grown ferromagnetic MnAs thin films on S- and Se-passivated GaAs substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs(100) substrates were changed by the surface treatment. We found that on the clean and the Se-passivated surfaces, MnAs films grow by a layer-by-layer mode. In contrast, on the S-passivated surface MnAs grows by an island growth mode. and polycrystalline films are obtained. We also found that the magnetization of the MnAs film on Se-passivated surface is larger than that on clean and S-passivated surfaces
Journal
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- Journal of the Magnetics Society of Japan
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Journal of the Magnetics Society of Japan 23 (1_2), 694-696, 1999
The Magnetics Society of Japan
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Details 詳細情報について
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- CRID
- 1390282680068896384
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- NII Article ID
- 110002810380
- 130004478414
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- NII Book ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
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- NDL BIB ID
- 4647078
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- Abstract License Flag
- Disallowed