原子層積層法によるBaフェライト薄膜の作製 : 下地層による結晶性の制御

DOI NDLデジタルコレクション Web Site 被引用文献4件 参考文献10件

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タイトル別名
  • Preparation of Ba-Ferrite Thin Films by the Alternate Layer Deposition Method-Control of Crystallization by Means of an Underlayer-
  • 原子層積層法によるBaフェライト薄膜の作製−下地層による結晶性の制御−
  • ゲンシソウ セキソウホウ ニヨル Ba フェライト ハクマク ノ サクセイ シ

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In order to obtain a hexagonal barium ferrite (BaM) film with large saturation magnetization, we attempted to reduce the thickness of a ZnO underlayer and to deposit BaM film on underlayers of various materials such as α-Fe2O3, amorphous barium ferrite (a-BaM), amorphous BaFe6O10 (a-BaFe6O10), and ZnFe2O4. The following results were obtained: (1) A ZnO underlayer less than 10 nm thick significantly degraded the c-axis orientation of the BaM films. (2) A BaM film with c-axis orientation was obtained only on ZnO, a-BaM/ZnO, and ZnFe2O4 underlayers. In particular, a film deposited on a (111)-oriented ZnFe2O4 underlayer had excellent c-axis orientation and magnetic properties. (3) The saturation magnetizations of films deposited on the various underlayers had low values below 260 emu/cc, and could not be increased by reducing the thickness of the ZnO underlayer or by depositing the film on an underlayer that did not contain ZnO.

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