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Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy
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- Bolotov Leonid
- Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
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- Tada Tetsuya
- Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
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- Iitake Masanori
- Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
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- Nishizawa Masayasu
- Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
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- Kanayama Toshihiko
- Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, Japan
Description
Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintained a constant tunneling current, an enhancement of electrostatic force with a lateral extent of ∼5 nm was observed around underlying donor atoms and charged defects. Additional variations of the surface potential and the probe-sample capacitance across the surface steps were associated with excess electric charge at the step edge. [DOI: 10.1380/ejssnt.2011.117]
Journal
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology 9 117-121, 2011
The Japan Society of Vacuum and Surface Science
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Keywords
Details 詳細情報について
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- CRID
- 1390282680163414784
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- NII Article ID
- 130004934134
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- ISSN
- 13480391
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed