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- Pennelli G.
- Diparimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, Italy
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- Nannini A.
- Diparimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, Italy
説明
A simple method for the fabrication of films with an high density of nanometric metal grains is presented and discussed. The method is based on the successive evaporation of different metals (Au, Al and In), with different melting points: after each evaporation, rapid thermal annealing treatments are used to induce agglomeration of the deposited material. The nanograin agglomeration (in particular of the Al film) resulted strongly dependent on the previous nanograin (gold) distribution and concentration. Statistics of gold based nanograin films, deposited on silicon dioxide, are presented for different gold thickness and annealing parameters. Results on Al induced agglomeration of a successively evaporated thin film are shown for different Au nanoparticle distribution and concentration. A final indium deposition, with suitable annealing temperature and time, produces films with a very high density of metal nanoparticles (more than 2000 nanograins/μm2, average radius between 5 and 10 nm). [DOI: 10.1380/ejssnt.2008.503]
収録刊行物
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology 7 503-506, 2009
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282680163658624
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- NII論文ID
- 130004934068
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- ISSN
- 13480391
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可