CODEPOSITION OF Fe AND Si ON SiO2/Si(001): RHEED STUDY

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  • Balashev V. V.
    Institute of Automation and Control Processes, Far Eastern Branch of Russian Academy of Sciences, Russia Faculty of Physics and Engineering, Far Easten State University, Russia
  • Korobtsov V. V.
    Institute of Automation and Control Processes, Far Eastern Branch of Russian Academy of Sciences, Russia Faculty of Physics and Engineering, Far Easten State University, Russia
  • Pisarenko T. A.
    Institute of Automation and Control Processes, Far Eastern Branch of Russian Academy of Sciences, Russia Faculty of Physics and Engineering, Far Easten State University, Russia
  • Chusovitin E. A.
    Institute of Automation and Control Processes, Far Eastern Branch of Russian Academy of Sciences, Russia
  • Vikulov V. A.
    Institute of Automation and Control Processes, Far Eastern Branch of Russian Academy of Sciences, Russia

説明

The investigation of the codeposition process of iron and silicon (at a ratio of 1:2) on SiO2/Si(001) surface was carried out at various substrate temperatures. A thin dioxide silicon layer (∼1 nm) was formed on Si(001) substrate by wet chemical treatment. It was found that the codeposition at room temperature results in the growth of continuous disordered film. Codeposition at 470°C initiates the interaction of Fe and Si atoms with each other on SiO2/Si(001) surface and the formation of β-FeSi2 polycrystalline film. At an increase of the codeposition temperature Si atoms interact with the SiO2 layer. So, at 650°C some part of deposited silicon is consumed on the formation of voids in defect regions of SiO2 layer and of three-dimensional (3D) epitaxial Si islands in these voids. Remaining part of adatoms is consumed on iron silicide formation. At 700°C all deposited silicon atoms are consumed on SiO2 layer decomposition. In that way Fe atoms react with only bare silicon surface that leads to growth of 3D epitaxial α-FeSi2 islands. It was investigated the influence of high temperature annealing on structural-phase composition of films deposited at various substrate temperatures. [DOI: 10.1380/ejssnt.2007.136]

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