A simple empirical model for calculating gain and excess noise in GaAs/Al.XI.Ga1-.XI.As APDs (0.3.LEQ..XI..LEQ.0.6)

DOI Web Site 8 References
  • Soroosh Mohammad
    Advanced Device Simulation Lab (ADSL), Electrical and Computer Engineering Department, Tarbiat Modares University
  • Moravvej-Farshi Mohammad Kazem
    Advanced Device Simulation Lab (ADSL), Electrical and Computer Engineering Department, Tarbiat Modares University
  • Saghafi Kamyar
    Electrical Engineering Department, Shahed University

Search this article

Description

In this paper, we present a simple empirical model for calculating gain and excess noise in heterojunction GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6), without going through the relatively complicated and time consuming Monte Carlo simulation, commonly used for such devices. In this model, we present a set of empirical formula which can predict a distribution function for ionization path length for a given electric field throughout multiplication region. To determine the optimized values of the adjustable parameters used in our empirical model, we train a back-propagation neural network. The results are in excellent agreement with those obtained by the random path length (RPL) technique.

Journal

  • IEICE Electronics Express

    IEICE Electronics Express 5 (20), 853-859, 2008

    The Institute of Electronics, Information and Communication Engineers

References(8)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top