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- Lee Jin-Gu
- School of Electrical Engineering, Kookmin University
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- Kim Dae Hwan
- School of Electrical Engineering, Kookmin University
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- Lee Jae Gab
- School of Advanced Materials Engineering, Kookmin University
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- Kim Dong Myong
- School of Electrical Engineering, Kookmin University
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- Min Kyeong-Sik
- School of Electrical Engineering, Kookmin University
説明
A compact but accurate HSPICE macromodel for single-bit resistive RAM (ReRAM) is proposed in this paper. This compact macromodel uses the minimum number of circuit elements to improve the HSPICE simulation speed. And, the macromodel is verified to show very good agreement with the measurements due to voltage-controlled resistors used as the SET and RESET resistors in the macromodel describing well the complicated current-voltage relationship of the ReRAM. An extended version of the macromodel is also proposed and verified for multi-bit ReRAM, where its SET resistance and RESET voltage can vary according to the SET pulse width applied to the ReRAM.
収録刊行物
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- IEICE Electronics Express
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IEICE Electronics Express 4 (19), 600-605, 2007
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390282680190092544
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- NII論文ID
- 130000088429
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- ISSN
- 13492543
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可